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REFERENCES: |
    R. Ferrini, G. Guizzetti, M. Patrini, A. Parisini, L. Tarricone, B. Valenti.
    Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV.
    <a href="https://doi.org/10.1140/epjb/e2002-00177-x"><i>Eur. Phys. J. B</i> <b>84</b>, 449-458 (2002)</a>
COMMENTS: |
    Ga<sub>0.51</sub>In<sub>0.49</sub>P. Undoped lattice matched film grown lattice matched on GaAs substrates, by metal-organic vapour phase epitaxy (MOVPE) at 700 °C.
CONDITIONS:
    substrate: GaAs
    film_thickness: 3.15e-6
DATA:
  - type: formula 1
    wavelength_range: 0.689 24.8
    coefficients: 5.058 3.27 0.459